QUANTUM EFFICIENCY OF INTERNAL PHOTOEFFECTS IN NARROW-GAP SEMICONDUCTORS: A MODELSCHAROCH P; SZATKOWSKI J.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5710-5714; BIBL. 10 REF.Article

GALVANOMAGNETIC EFFECTS IN A NON-HOMOGENEOUS SEMICONDUCTORSIERANSKI K; SZATKOWSKI J.1979; ACTA PHYS. POL., A; ISSN 0587-4246; POL; DA. 1979; VOL. 56; NO 1; PP. 99-107; BIBL. 9 REF.Article

DISORDER SCATTERING IN MIXED PB_1-XSN_XTE-TYPE SEMICONDUCTORSSIERANSKI K; SZATKOWSKI J.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 107; NO 2; PP. K87-K90; BIBL. 9 REF.Article

THEORY OF THE FREE-CARRIER ABSORPTION IN ZINCBLENDE NARROW-GAP SEMICONDUCTORSSIERANSKI K; SZATKOWSKI J.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 104; NO 1; PP. 57-67; ABS. GER; BIBL. 8 REF.Article

A NEW METHOD OF OBTAINING CRYSTALLINE CD₃AS₂ FILMS ON NON-CRYSTALLINE SUBSTRATES.PAWLIKOWSKI JM; SIERANSKI K; SZATKOWSKI J et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 30; NO 1; PP. 99-102; BIBL. 9 REF.Article

EFFECTIVE MASS OF HEAVY HOLES IN CD_XHG_1-XTE AT 4.2 TO 300 K².SIERANSKI K; SZATKOWSKI J; MAJCHROWSKA E et al.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 77; NO 2; PP. K91-K95; BIBL. 13 REF.Article

Universal tight-binding model for II-V semiconducting compoundsSIERANSKI, K; SZATKOWSKI, J.Solid state communications. 1992, Vol 83, Num 9, pp 717-719, issn 0038-1098Article

Theory of free-carrier magnetoabsorption in mixed zincblende narrow-gap semiconductorsSZATKOWSKI, J; SIERANSKI, K.Physica status solidi. B. Basic research. 1983, Vol 120, Num 1, pp 263-272, issn 0370-1972Article

Simple interface-layer model for the nonideal characteristics of the Schottky-Barrier diodeSZATKOWSKI, J; SIERANSKI, K.Solid-state electronics. 1992, Vol 35, Num 7, pp 1013-1015, issn 0038-1101Article

Influence of interface states on the electrical properties of Mg-Zn₃P₂ junctionsSZATKOWSKI, J; SIERANSKI, K.Physica status solidi. A. Applied research. 1988, Vol 106, Num 1, pp K31-K34, issn 0031-8965Article

DER EINFLUSS DER RADONINHALATION AUF DEN LIPIDHAUSHALT IM BLUTSERUM BEI KRANKEN MIT ISCHAEMISCHER HERZKRANKHEIT = L'INFLUENCE DE L'INHALATION DE RADON SUR L'EQUILIBRE LIPIDIQUE DU SERUM SANGUIN CHEZ DES MALADES AVEC CARDIOPATHIE ISCHEMIQUEMARKIEWICZ K; SZATKOWSKI J; KOCHANSKI W et al.1978; Z. PHYSIOTHERAP.; DDR; DA. 1978; VOL. 30; NO 5; PP. 371-375; ABS. RUS/ENG; BIBL. 19 REF.Article

Electronic energy levels of an ideal vacancy in II₃-V₂ compoundsSZATKOWSKI, J; SIERANSKI, K.Solid state communications. 1995, Vol 93, Num 7, pp 595-598, issn 0038-1098Article

Tight-binding model for Zn₃P₂ valence bandsSIERANSKI, K; SZATKOWSKI, J.Solid state communications. 1993, Vol 88, Num 8, pp 663-666, issn 0038-1098Article

Electrical conductivity of Zn₃As₂SZATKOWSKI, J; SIERANSKI, K.The Journal of physics and chemistry of solids. 1990, Vol 51, Num 3, pp 249-251, issn 0022-3697Article

Interface effects on Mg-Zn₃P₂ Schottky diodesSZATKOWSKI, J; SIERANSKI, K.Solid-state electronics. 1988, Vol 31, Num 2, pp 257-260, issn 0038-1101Article

Electrical properties of Mg-Zn₃P₂ contactsSZATKOWSKI, J; SIERANSKI, K.Physica status solidi. A. Applied research. 1988, Vol 106, Num 2, pp 473-477, issn 0031-8965Article

Electrical properties of Zn₃P₂ at room temperaturesSIERANSKI, K; SZATKOWSKI, J.Physica status solidi. A. Applied research. 1989, Vol 111, Num 1, pp K57-K60, issn 0031-8965Article

Electrical conductivity of Zn₃P₂SIERANSKI, K; SZATKOWSKI, J.Physica status solidi. A. Applied research. 1986, Vol 94, Num 2, pp K133-K135, issn 0031-8965Article

Free-carrier absorption in semimagnetic semiconductorsSIERANSKI, K; SZATKOWSKI, J.Physica status solidi. B. Basic research. 1985, Vol 128, Num 1, pp K33-K35, issn 0370-1972Article

Intraband absorption due to alloy scattering in lead chalcogenide semiconductorsSIERANSKI, K; SZATKOWSKI, J.Physica status solidi. B. Basic research. 1983, Vol 118, Num 2, pp 871-879, issn 0370-1972Article

NON-LINEAR ELECTRICAL EFFECTS IN EPITAXIAL GRADED-GAP CD_XHG_1-XTE LAYERSSZATKOWSKI J; KACZMARSKI K; KOCHAN B et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 70; NO 1; PP. 49-55; BIBL. 6 REF.Article

FERMI LEVEL IN CD_XHG_1-XTE².SIERANSKI K; SZATKOWSKI J; PAWLIKOWSKI JM et al.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 81; NO 1; PP. K67-K70; BIBL. 8 REF.Article

ELECTRICAL TRANSPORT PROPERTIES OF EPITAXIAL GRADED-GAP CD_XHG_1-XTE LAYERS.SZATKOWSKI J; SIERANSKI K; PAWLIKOWSKI JM et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 42; NO 2; PP. 721-727; ABS. ALLEM.; BIBL. 31 REF.Article

Deep-level transient spectroscopy study of hole traps in p-type CdTeSZATKOWSKI, J; PLACZEK-POPKO, E; HAJDUSIANEK, A et al.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 39, pp 7935-7940, issn 0953-8984Article

The optical gap E_g as a function of the Urbach tail parameter E_O in the a-C:H films obtained by glow discharge techniqueSZATKOWSKI, J; MIKULSKI, P; ROZPŁOCH, F et al.Journal of non-crystalline solids. 1991, Vol 127, Num 1, pp 8-11, issn 0022-3093, 4 p.Article